View DTA143EM3T5G_6020649.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? semiconductor components industries, llc, 2004 february, 2004 ? rev. 0 1 publication order number: dta114em3/d dta114em3t5g series preferred devices digital transistors (brt) pnp silicon surface mount transistors with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. the digital transistor eliminates these individual components by integrating them into a single device. the use of a digital transistor can reduce both system cost and board space. the device is housed in the sot?723 package which is designed for low power surface mount applications. ? simplifies circuit design ? reduces board space ? reduces component count ? the sot?723 package can be soldered using wave or reflow. ? available in 4 mm, 8000 unit tape & reel ? these are pb?free devices maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc preferred devices are recommended choices for future use and best overall value. pnp silicon digital transistors pin 3 collector (output) pin 2 emitter (ground) pin 1 base (input) r1 r2 xx = specific device code (see marking table on page 2) m = date code marking diagram http://onsemi.com sot?723 case 631aa style 1 3 2 1 xx m see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information
dta114em3t5g series http://onsemi.com 2 ordering information, device marking and resistor values device marking r1 (k) r2 (k) package shipping 2 dta114em3t5g dta124em3t5g* dta144em3t5g dta114ym3t5g dta114tm3t5g dta143tm3t5g* dta123em3t5g* DTA143EM3T5G* dta143zm3t5g* dta124xm3t5g dta123jm3t5g* dta115em3t5g dta144wm3t5g* 6a 6b 6c 6d 6e 6f 6h 6j 6k 6l 6m 6n 6p 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 10 22 47 47 2.2 4.7 47 47 47 100 22 sot?723 (pb?free) 8000/tape & reel *available upon request 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. thermal characteristics characteristic symbol max unit total device dissipation, fr?4 board (note 1.) @ t a = 25 c derate above 25 c p d 260 2.0 mw mw/ c thermal resistance, junction to ambient (note 1.) r ja 480 c/w total device dissipation, fr?4 board (note 2.) @ t a = 25 c derate above 25 c p d 600 4.8 mw mw/ c thermal resistance, junction to ambient (note 2.) r ja 205 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?4 @ minimum pad 2. fr?4 @ 1.0 1.0 inch pad
dta114em3t5g series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector?base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector?emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter?base cutoff current dta114em3t5g (v eb = 6.0 v, i c = 0) dta124em3t5g dta144em3t5g dta114ym3t5g dta114tm3t5g dta143tm3t5g dta123em3t5g DTA143EM3T5G dta143zm3t5g dta124xm3t5g dta123jm3t5g dta115em3t5g dta144wm3t5g i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 madc collector?base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector?emitter breakdown voltage (note 3.) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics (note 3.) dc current gain dta114em3t5g (v ce = 10 v, i c = 5.0 ma) dta124em3t5g dta144em3t5g dta114ym3t5g dta114tm3t5g dta143tm3t5g dta123em3t5g DTA143EM3T5G dta143zm3t5g dta124xm3t5g dta123jm3t5g dta115em3t5g dta144wm3t5g h fe 35 60 80 80 160 160 8.0 15 80 80 80 80 80 60 100 140 140 250 250 15 27 140 130 140 150 140 ? ? ? ? ? ? ? ? ? ? ? ? ? collector?emitter saturation voltage (i c = 10 ma, i e = 0.3 ma) (i c = 10 ma, i b = 5 ma) dta123em3t5g (i c = 10 ma, i b = 1 ma) dta114tm3t5g/dta143tm3t5g/ dta143zm3t5g/dta124xm3t5g/DTA143EM3T5G v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) dta114em3t5g dta124em3t5g dta114ym3t5g dta114tm3t5g dta143tm3t5g dta123em3t5g DTA143EM3T5G dta143zm3t5g dta124xm3t5g dta123jm3t5g (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) dta144em3t5g (v cc = 5.0 v, v b = 5.5 v, r l = 1.0 k ) dta115em3t5g (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ) dta144wm3t5g v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) dta114tm3t5g dta143tm3t5g dta123em3t5g DTA143EM3T5G v oh 4.9 ? ? vdc 3. pulse test: pulse width < 300 s, duty cycle < 2.0%
dta114em3t5g series http://onsemi.com 4 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit input resistor dta114em3t5g dta124em3t5g dta144em3t5g dta114ym3t5g dta114tm3t5g dta143tm3t5g dta123em3t5g DTA143EM3T5G dta143zm3t5g dta124xm3t5g dta123jm3t5g dta115em3t5g dta144wm3t5g r1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 k resistor ratio dta114em3t5g/dta124em3t5g/dta144em3t5g / dta115em3t5g dta114ym3t5g dta114tm3t5g/dta143tm3t5g dta123em3t5g/DTA143EM3T5G dta143zm3t5g dta124xm3t5g dta123jm3t5g dta144wm3t5g r 1 /r 2 0.8 0.17 ? 0.8 0.055 0.38 0.038 1.7 1.0 0.21 ? 1.0 0.1 0.47 0.047 2.1 1.2 0.25 ? 1.2 0.185 0.56 0.056 2.6 figure 1. derating curve 250 200 150 100 50 0 -50 0 50 100 150 t a , ambient temperature ( c) p d , power dissipation (milliwatts) r ja = 480 c/w 300
dta114em3t5g series http://onsemi.com 5 typical electrical characteristics ? dta114em3t5g v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 100 10 1 0.1 0.01 0.001 0 v in , input voltage (volts) t a =-25 c 25 c 1 2 3 4 5 6 7 8 9 10 figure 3. dc current gain figure 4. output capacitance figure 5. output current versus input voltage figure 6. input voltage versus output current 0.01 20 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 0.1 1 0 40 50 1000 1 10 100 i c , collector current (ma) t a =75 c -25 c 100 10 0 i c , collector current (ma) 0.1 1 10 100 10 20 30 40 50 t a =-25 c 25 c 75 c 75 c i c /i b = 10 50 010203040 4 3 1 2 v r , reverse bias voltage (volts) c ob , capacitance (pf) 0 t a =-25 c 25 c 75 c 25 c v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
dta114em3t5g series http://onsemi.com 6 typical electrical characteristics ? dta124em3t5g v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c figure 8. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 figure 9. output capacitance i c , collector current (ma) 0 10 20 30 v o = 0.2 v t a =-25 c 75 c 100 10 1 0.1 40 50 figure 10. output current versus input voltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 v in , input voltage (volts) 5 6 7 8 9 10 figure 11. input voltage versus output current 0.01 v ce(sat) , maximum collector voltage (volts) 0.1 1 10 40 i c , collector current (ma) 0 20 50 75 c 25 c t a =-25 c 50 010 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 25 c i c /i b = 10 25 c -25 c v ce = 10 v t a =75 c f = 1 mhz l e = 0 v t a = 25 c 75 c 25 c t a =-25 c v o = 5 v
dta114em3t5g series http://onsemi.com 7 typical electrical characteristics ? dta144em3t5g v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c i c , collector current (ma) 1 0.1 0.01 010203040 75 c 25 c v ce(sat) , maximum collector voltage (volts) figure 13. dc current gain 1000 100 10 1 10 100 i c , collector current (ma) -25 c figure 14. output capacitance figure 15. output current versus input voltage 100 10 1 0.1 0.01 0.001 010 25 c v in , input voltage (volts) -25 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 123456 789 figure 16. input voltage versus output current 100 10 1 0.1 0 10 20 30 40 i c , collector current (ma) t a =-25 c 25 c 75 c 50 i c /i b = 10 t a =-25 c 25 c t a =75 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v t a =75 c v o = 0.2 v
dta114em3t5g series http://onsemi.com 8 typical electrical characteristics ? dta114ym3t5g 10 1 0.1 010 20 30 4050 100 10 1 0 246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 18. dc current gain 1 10 100 i c , collector current (ma) figure 19. output capacitance figure 20. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 21. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhz l e = 0 v t a = 25 c load +12 v figure 22. inexpensive, unregulated current source typical application for pnp brts 25 c i c /i b = 10 t a =-25 c t a =75 c 25 c -25 c v o = 5 v v o = 0.2 v 25 c t a =-25 c 75 c 75 c
dta114em3t5g series http://onsemi.com 9 typical electrical characteristics e dta115em3t5g 75 c 25 c ?25 c figure 23. maximum collector voltage versus collector current figure 24. dc current gain figure 25. output capacitance figure 26. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 27. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 7 6 5 4 3 2 1 0 i c , collector current (ma) 100 10 1 100 10 1 0.01 1000 v ce(sat) , maximum collector voltage (volts) h fe , dc current gain (normalized) 1.2 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.1 1 10 i c , collector current (ma) 10 9 8 7 100 12 10 8 6 4 2 0 1 10 18 16 14 20 v in , input voltage (volts) i c /i b = 10 75 c 25 c t a = ?25 c v ce = 10 v 75 c 25 c t a = ?25 c v o = 5 v v o = 0.2 v 75 c 25 c t a = ?25 c f = 1 mhz i e = 0 v t a = 25 c
dta114em3t5g series http://onsemi.com 10 typical electrical characteristics e dta144wm3t5g figure 28. maximum collector voltage versus collector current figure 29. dc current gain figure 30. output capacitance figure 31. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 32. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 35 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 0.01 1000 v ce(sat) , maximum collector voltage (volts) h fe , dc current gain (normalized) 1.4 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 11 9 8 7 100 15 10 5 0 1 10 20 25 v in , input voltage (volts) 50 45 40 0.1 0.01 10 1.2 f = 1 mhz i e = 0 v t a = 25 c 75 c 25 c t a = ?25 c v o = 5 v 75 c 25 c t a = ?25 c v o = 0.2 v 75 c 25 c t a = ?25 c i c /i b = 10 v ce = 10 v 75 c 25 c t a = ?25 c
dta114em3t5g series http://onsemi.com 11 package dimensions d b1 e b e a l c h ?y? ?x? x 0.08 (0.0032) y 2x e 1 2 3 1.0 0.039 mm inches scale 20:1 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 0.40 0.0157 style 1: pin 1. base 2. emitter 3. collector dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.20 0.27 b1 0.25 0.3 0.35 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l 0.15 0.20 0.25 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 bsc 0.045 0.047 0.049 0.0059 0.0079 0.0098 min nom max inches e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. sot?723 case 631aa?01 issue a *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sot?723 soldering footprint*
dta114em3t5g series http://onsemi.com 12 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 dta114em3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.

▲Up To Search▲

Price & Availability of DTA143EM3T5G

	To Download DTA143EM3T5G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .